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Frequency-domain probe beam deflection (FD-PBD) is an experimental technique for measuring thermal properties that combines heating by a modulated pump laser and measurement of the temperature field via thermoelastic displacement of the sample surface. In the conventional implementation of FD-PBD, the data are mostly sensitive to the in-plane thermal diffusivity. We describe an extension of FD-PBD that introduces sensitivity to through-plane thermal conductance by immersing the sample in a dielectric liquid and measuring the beam deflection created by the temperature field of the liquid. We demonstrate the accuracy of the method by measuring (1) the thermal conductivity of a 310 nm thick thermally grown oxide on Si, (2) the thermal boundary conductance of bonded interface between a 3C-SiC film and a single crystal diamond substrate, and (3) the thermal conductivities of several bulk materials. We map the thermal boundary conductance of a 3C-SiC/diamond interface with a precision of 1% using a lock-in time constant of 3 ms and dwell time of 15 ms. The spatial resolution and maximum probing depth are proportional to the radius of the focused laser beams and can be varied over the range of 1–20 μm and 4–80 μm, respectively, by varying the 1/e2 intensity radius of the focused laser beams from 2 to 40 μm. FD-PBD with liquid immersion thus enables fast mapping of spatial variations in thermal boundary conductance of deeply buried interfaces. 

Abstract High thermal conductivity electronic materials are critical components for high-performance electronic and photonic devices as both active functional materials and thermal management materials. We report an isotropic high thermal conductivity exceeding 500 W m −1 K −1 at room temperature in high-quality wafer-scale cubic silicon carbide (3C-SiC) crystals, which is the second highest among large crystals (only surpassed by diamond). Furthermore, the corresponding 3C-SiC thin films are found to have record-high in-plane and cross-plane thermal conductivity, even higher than diamond thin films with equivalent thicknesses. Our results resolve a long-standing puzzle that the literature values of thermal conductivity for 3C-SiC are lower than the structurally more complex 6H-SiC. We show that the observed high thermal conductivity in this work arises from the high purity and high crystal quality of 3C-SiC crystals which avoids the exceptionally strong defect-phonon scatterings. Moreover, 3C-SiC is a SiC polytype which can be epitaxially grown on Si. We show that the measured 3C-SiC-Si thermal boundary conductance is among the highest for semiconductor interfaces. These findings provide insights for fundamental phonon transport mechanisms, and suggest that 3C-SiC is an excellent wide-bandgap semiconductor for applications of next-generation power electronics as both active components and substrates.